Understanding Ceramic Substrate Metallization: The Perfect Fusion of Ceramic and Metal

In the realm of high-power electronic devices, achieving interconnectivity between chips and electronic components necessitates metallization of ceramic substrates. Metallizing ceramics requires excellent sealing properties, low sheet resistance, and resistivity of the metal conductive layer, along with strong adhesion to the ceramic substrate. Even after metallization, ceramics must retain high thermal conductivity. Therefore, Copper (Cu), with its excellent ductility, high thermal and electrical conductivity, becomes the most commonly used material in power electronic devices.

Although ceramics boast superior overall performance compared to other substrate materials, their application is limited due to their stable electronic coordination, which makes them less reactive and challenging to wet with common metals. The performance of metallized ceramic substrates is closely linked to the stability of power electronic devices during operation, making exploration into ceramic surface metallization significant.

Common methods of ceramic substrate metallization include chemical plating, direct copper plating, thick-film metallization, and thin-film metallization. Here, we explore several metallization processes for ceramic packaging. Below table summarizes the advantages and disadvantages of different ceramic metallization methods.

We leverages a combination of these metallization processes to enhance the performance of ceramic substrates. Initially, a thin metal seed layer (titanium layer: 50-100nm, copper layer: 100-300nm) is deposited on the ceramic surface using physical vapor deposition (PVD), forming a strong bond with the ceramic substrate through van der Waals forces. Subsequently, additional metal thickness is achieved through electroplating (chemical plating), ensuring superior performance compared to substrates produced solely through PVD or chemical plating methods. This approach not only strengthens the bond between the metal layer and the ceramic substrate but also allows for the production of metallized ceramic substrates with varying thicknesses (up to 1000μm), meeting diverse application requirements.

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